2N5115 [Linear Systems]
SINGLE P-CHANNEL JFET; 单P沟道JFET
| 型号： | 2N5115 |
| 厂家： | 
Linear Systems |
| 描述： | SINGLE P-CHANNEL JFET |
| 文件： | 总2页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5114 SERIES
SINGLE P-CHANNEL JFET
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE
75Ω
LOW CAPACITANCE
6pF
TO-18
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
BOTTOM VIEW
G
S
2
1
3
D
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
-55 to 200°C
-55 to 200°C
500mW
-50mA
Maximum Voltages
Gate to Drain
Gate to Source
30V
30V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
2N5114
2N5115
2N5116
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
BVGSS Gate to Source Breakdown Voltage
VGS(off) Gate to Source Cutoff Voltage
30
5
30
3
30
1
IG = 1µA, VDS = 0V
VDS = -15V, ID = -1nA
IG = -1mA, VDS = 0V
VGS = 0V, ID = -15mA
VGS = 0V, ID = -7mA
VGS = 0V, ID = -3mA
10
-1
-1.3
6
-1
4
-1
VGS(F)
Gate to Source Forward Voltage
-0.7
-1.0
-0.7
-0.5
V
VDS(on) Drain to Source On Voltage
-0.8
-0.6
-30
-90
500
-500
VDS = -18V, VGS = 0V
VDS = -15V, VGS = 0V
IDSS
Drain to Source Saturation Current2
mA
-15
-60
500
-5
-25
500
IGSS
IG
Gate Leakage Current
Gate Operating Current
5
-5
-10
-10
-10
VGS = 20V, VDS = 0V
VDG = -15V, ID = -1mA
VDS = -15V, VGS = 12V
VDS = -15V, VGS = 7V
VDS = -15V, VGS = 5V
VGS = 0V, ID = -1mA
pA
ID(off)
Drain Cutoff Current
-500
100
-500
150
rDS(on)
Drain to Source On Resistance
75
Ω
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
2N5114
2N5115
2N5116
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
gfs
gos
Forward Transconductance
Output Conductance
4.5
20
mS
µS
V
DS = -15V, ID = -1mA
f = 1kHz
VGS = 0V, ID = 0mA
f = 1kHz
rds(on)
Ciss
Drain to Source On Resistance
Input Capacitance
75
25
7
100
25
150
25
Ω
pF
VDS = -15V, VGS = 0V
f = 1MHz
20
5
VDS = 0V, VGS = 12V
f = 1MHz
VDS = 0V, VGS = 7V
f = 1MHz
Crss
Reverse Transfer Capacitance
Equivalent Noise Voltage
6
7
VDS = 0V, VGS = 5V
f = 1MHz
6
7
VDG = 10V, ID = 10mA
f = 1 kHz
nV/√Hz
en
20
SWITCHING CHARACTERISTICS (max)
SYM. CHARACTERISTIC 2N5114 2N5115 2N5116
SWITCHING CIRCUIT CHARACTERISTICS
UNITS
SYM.
VDD
VGG
2N5114
-10V
20V
2N5115
-6V
12V
2N5116
-6V
td(on)
tr
td(off)
tf
6
10
6
10
20
8
12
30
10
50
Turn On Time
8V
ns
RL
RG
ID(on)
VGS(H)
VGS(L)
430Ω
100Ω
-15mA
0V
910Ω
220Ω
-7mA
0V
2kΩ
390Ω
-3mA
0V
Turn Off Time
15
30
-11V
-7V
-5V
TO-18
Three Lead
SWITCHING TEST CIRCUIT
VGG
VDD
0.230
0.209
DIA.
0.195
0.175
DIA.
0.030
MAX.
RL
1.2k
Ω
Ω
0.150
0.115
VGS(H)
VGS(L)
0.1µF
RG
3 LEADS
0.500 MIN.
0.050
0.019
0.016
DIA.
7.5k
Ω
51
Ω
1.2k
0.100
Sampling
Scope
2
1
3
51
Ω
51Ω
45°
0.046
0.036
0.048
0.028
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2.
Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
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